公开(公告)号：US20220108741A1

公开(公告)日：2022-04-07

申请号：US17362138

申请日：2021-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEHO HONG ,  Hyuncheol Kim ,  Yongseok Kim ,  Iigweon Kim ,  Hyeongwon Seo ,  Sungwon Yoo ,  Kyunghwan Lee

IPC: G11C11/402 ,  H01L27/102 ,  H01L29/66 ,  H01L29/749

Abstract: A semiconductor memory device according to the present inventive concept includes: a semiconductor substrate; a common source semiconductor layer doped with impurities of a first conductivity type on the semiconductor substrate; a plurality of insulating layers and a plurality of word line structures alternately stacked on the common source semiconductor layer; and a memory cell dielectric layer penetrating the plurality of insulating layers and the plurality of word line structures and covering an internal wall of a channel hole extending in a vertical direction, and a memory cell structure filling the channel hole. The memory cell structure includes a channel layer, which has the memory cell dielectric layer thereon and fills at least a portion of the channel hole, and a drain layer covering an upper surface of the channel layer, doped with impurities of a second conductivity type, and filling some of an upper portion of the channel hole.