公开(公告)号：US20230395668A1

公开(公告)日：2023-12-07

申请号：US18296329

申请日：2023-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su Jin JUNG ,  Jin Bum KIM ,  In Gyu JANG

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/775 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/41733 ,  H01L29/0653 ,  H01L29/775 ,  H01L29/78696 ,  H01L29/66553 ,  H01L29/0673 ,  H01L29/42392

Abstract: A semiconductor device includes a substrate; an active pattern disposed on the substrate and extending in a first direction; a plurality of gate structures, wherein the plurality of gate structures is disposed on the active pattern and arranged in the first direction, wherein each of the plurality of gate structures includes a gate electrode and a gate insulating film, and wherein the gate electrode extends in a second direction; a source/drain pattern disposed between adjacent gate structures of the plurality of gate structures; a source/drain contact connected to the source/drain pattern; and a contact silicide film disposed between the source/drain pattern and the source/drain contact, wherein the contact silicide film includes a bowl region that wraps a lower portion of the source/drain contact, and a protruding region that protrudes from the bowl region of the contact silicide film.