公开(公告)号：US20220102306A1

公开(公告)日：2022-03-31

申请号：US17240641

申请日：2021-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAE HO AHN ,  JI WON KIM ,  SUNG-MIN HWANG ,  JOON-SUNG LIM ,  SUK KANG SUNG

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/768

Abstract: A nonvolatile memory device including a substrate extending in a first direction, a ground selection line extending in the first direction on the substrate, a plurality of word lines stacked sequentially on the ground selection line and extending in the first direction, a landing pad spaced apart from the ground selection line and the plurality of word lines in the first direction, a rear contact plug connected to a lower face of the landing pad and extending in a second direction intersecting the first direction, a front contact plug connected to an upper face of the landing pad opposite the lower face and extending in the second direction, an input/output pad electrically connected to the rear contact plug, and an upper bonding pad electrically connected to the front contact plug and connected to at least a part of a plurality of circuit elements of the nonvolatile memory device.

公开(公告)号：US20210358933A1

公开(公告)日：2021-11-18

申请号：US17391289

申请日：2021-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG MIN HWANG ,  JOON SUNG LIM ,  BUM KYU KANG ,  JAE HO AHN

IPC: H01L27/11556 ,  H01L23/535

Abstract: A three-dimensional semiconductor device includes a first gate group on a lower structure and a second gate group on the first gate group. The first gate group includes first pad regions that are: (1) lowered in a first direction that is parallel to an upper surface of the lower structure and (2) raised in a second direction that is parallel to an upper surface of the lower structure and perpendicular to the first direction. The second gate group includes second pad regions that are sequentially raised in the first direction and raised in the second direction.