公开(公告)号：US20210118927A1

公开(公告)日：2021-04-22

申请号：US16928263

申请日：2020-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GWI DEOK RYAN LEE ,  JAE KYU LEE ,  SANG CHUN PARK ,  TAE YON LEE ,  JAE HOON JEON ,  MYUNG LAE CHU

IPC: H01L27/146 ,  H01L29/786 ,  H01L27/30 ,  H04N5/369

Abstract: An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor having a transistor structure disposed between the first surface and the photoelectric conversion layer and spaced from the photoelectric conversion layer, and includes a semiconductor layer composed of a metal oxide semiconductor material. The semiconductor layer may have a third surface facing the first direction and a fourth surface opposite the third surface, with a second gate disposed on the semiconductor layer. The semiconductor layer may be connected to the first gate. A light blocking layer may be disposed between the third surface and the photoelectric conversion layer, and spaced from the photoelectric conversion layer