公开(公告)号：US20180190699A1

公开(公告)日：2018-07-05

申请号：US15704690

申请日：2017-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAE YON LEE ,  GWI DEOK LEE ,  MASARU ISHll ,  YOUNG GU JIN

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/361 ,  H04N5/3745

CPC classification number: H01L27/14614 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14638 ,  H01L27/14667 ,  H01L27/14689 ,  H01L27/14812 ,  H04N5/361 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/378 ,  H04N5/379

Abstract: An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.

公开(公告)号：US20210118927A1

公开(公告)日：2021-04-22

申请号：US16928263

申请日：2020-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GWI DEOK RYAN LEE ,  JAE KYU LEE ,  SANG CHUN PARK ,  TAE YON LEE ,  JAE HOON JEON ,  MYUNG LAE CHU

IPC: H01L27/146 ,  H01L29/786 ,  H01L27/30 ,  H04N5/369

Abstract: An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor having a transistor structure disposed between the first surface and the photoelectric conversion layer and spaced from the photoelectric conversion layer, and includes a semiconductor layer composed of a metal oxide semiconductor material. The semiconductor layer may have a third surface facing the first direction and a fourth surface opposite the third surface, with a second gate disposed on the semiconductor layer. The semiconductor layer may be connected to the first gate. A light blocking layer may be disposed between the third surface and the photoelectric conversion layer, and spaced from the photoelectric conversion layer

公开(公告)号：US20180197910A1

公开(公告)日：2018-07-12

申请号：US15786687

申请日：2017-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： GWI-DEOK RYAN LEE ,  TAE YON LEE

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/376 ,  H04N5/378

CPC classification number: H01L27/14609 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/353 ,  H04N5/374 ,  H04N5/37452 ,  H04N5/3765 ,  H04N5/378

Abstract: An image sensor includes a light-sensing element that generates charge in response to incident light, a storage diode formed in a substrate, wherein the storage diode stores the charge generated by the light-sensing element, a floating diffusion region formed in a top surface of the substrate and spaced apart from the storage diode, and a transfer gate at least partially buried under the top surface of the substrate, wherein the transfer gate controls the transfer of the charge from the storage diode to the floating diffusion region.

公开(公告)号：US20180040657A1

公开(公告)日：2018-02-08

申请号：US15470152

申请日：2017-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GWI-DEOK RYAN LEE ,  MYUNG WON LEE ,  TAE YON LEE ,  IN GYU BAEK

IPC: H01L27/146 ,  H04N5/378 ,  H04N9/04 ,  H01L27/30

CPC classification number: H01L27/14634 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/307 ,  H04N5/378 ,  H04N9/04

Abstract: An image sensor includes a semiconductor substrate providing a plurality of pixel regions, a semiconductor photoelectric device disposed in each of the plurality of pixel regions, an organic photoelectric device disposed above the semiconductor photoelectric device, and a pixel circuit disposed below the semiconductor photoelectric device. The pixel circuit includes a plurality of driving transistors configured to generate a pixel voltage signal from an electric charge generated in the semiconductor photoelectric device and the organic photoelectric device. A driving gate electrode of at least one of the plurality of driving transistors has a region embedded in the semiconductor substrate.