公开(公告)号：US20160240580A1

公开(公告)日：2016-08-18

申请号：US15002755

申请日：2016-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wenxu XIANYU ,  YOUNGYOUNG PARK ,  WOOYOUNG YANG ,  JEONGYUB LEE

IPC: H01L27/146

CPC classification number: H01L27/14647 ,  H01L27/1446 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/14627 ,  H01L27/14692 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/035227

Abstract: A photodetecting device, a method of manufacturing the photodetecting device, an image sensor, and a method of manufacturing the image sensor are provided. The photodetecting device includes a first insulation layer, a silicon layer disposed on the first insulation layer, a metal plug disposed through the first insulation layer and the silicon layer, a silicon wire disposed on the silicon layer, and an electrode connected to the silicon wire.

Abstract translation: 提供了光检测装置，制造光电检测装置的方法，图像传感器以及图像传感器的制造方法。 光检测装置包括第一绝缘层，设置在第一绝缘层上的硅层，穿过第一绝缘层和硅层设置的金属插塞，设置在硅层上的硅线，以及连接到硅线的电极 。