公开(公告)号：US20240191396A1

公开(公告)日：2024-06-13

申请号：US18285099

申请日：2022-03-31

Applicant: University of Copenhagen ,  Danmarks Tekniske Universitet

Inventor： Joachim Elbeshausen Sestoft ,  Thomas Kanne Nordqvist ,  Mikelis Marnauza ,  Aske Nørskov Gejl ,  Dags Olsteins ,  Kasper Grove-Rasmussen ,  Jesper Nygård

IPC: C30B29/60 ,  C30B11/12 ,  C30B29/40 ,  C30B29/66 ,  H01L29/06 ,  H01L29/20 ,  H01L29/66 ,  H01L29/76 ,  H01L31/0352 ,  H01L33/06 ,  H10N60/12

CPC classification number: C30B29/605 ,  C30B11/12 ,  C30B29/40 ,  C30B29/66 ,  H01L29/0665 ,  H01L29/20 ,  H01L29/66977 ,  H01L29/7613 ,  H01L31/035227 ,  H01L33/06 ,  H10N60/12

Abstract: The present disclosure relates to a method of manufacturing a transferable lamella comprising interconnected nanostructures, the method comprising the steps of: a) providing a substrate such as a planar substrate; b) forming at least one superstructure on the substrate, said superstructure comprising a plurality of elongated nanostructures (formed e.g. by growth, deposition, and/or etching); wherein the elongated nanostructures are formed such that at least two of said nanostructures are conductively interconnected, and/or wherein at least a first layer is grown or deposited to conductively interconnect or insulate at least a part of the elongated nanostructures; c) encapsulating at least a portion of said superstructure in an encapsulating material, said portion comprising at least two interconnected nanostructures; and d) cutting the encapsulating material in a direction that intersects at least two interconnected nanostructures, thereby manufacturing a transferable lamella comprising interconnected nanostructures. The present disclosure further relates to an electronic device manufactured from one or more of the lamellas provided by the method.

公开(公告)号：US11862742B2

公开(公告)日：2024-01-02

申请号：US17419456

申请日：2020-01-16

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Iman S. Roqan ,  Somak Mitra ,  Yusin Pak

IPC: H01L31/0352 ,  H01L31/109 ,  H01L31/0304 ,  H01L31/09

CPC classification number: H01L31/035218 ,  H01L31/03048 ,  H01L31/035227 ,  H01L31/09 ,  H01L31/109

Abstract: A photodetector for detecting deep ultra-violet light includes a substrate; first and second electrodes separated by a channel; and colloidal MnO based quantum dots formed in the channel. The colloidal MnO based quantum dots are sensitive to ultra-violet light having a wavelength lower than 300 nm.

公开(公告)号：US20230366913A1

公开(公告)日：2023-11-16

申请号：US18247059

申请日：2021-09-28

Applicant: PsiQuantum, Corp.

Inventor： Vimal KAMINENI ,  Nicholas V. LICAUSI ,  Ann MELNICHUK ,  James Jay MCMAHON ,  Henrik JOHANSSON ,  Alexey VERT

IPC: G01R15/24 ,  G02F1/035 ,  G01J1/44 ,  G01J5/0818 ,  G01R13/02 ,  H01L27/144 ,  H01L31/0352

CPC classification number: G01R15/242 ,  G02F1/035 ,  G01J1/44 ,  G01J5/0818 ,  G01R13/0281 ,  H01L27/1446 ,  H01L31/035227 ,  G01J2001/442

Abstract: A photonic integrated circuit including a substrate, a plurality of oxide layers on the substrate, and various passive and active integrated optical components in the plurality of oxide layers. The integrated optical components include silicon nitride waveguides, a Pockets effect phase shifter (e.g., BaTiO3 phase shifter), a superconductive nanowire single photon detector (SNSPD), an optical isolation structure surrounding the SNSPD, a single photon generator, a thermal isolation structure, a heater, a temperature sensor, a photodiode for data communication (e.g., a Ge photodiode), or a combination thereof.

公开(公告)号：US20230202844A1

公开(公告)日：2023-06-29

申请号：US18115224

申请日：2023-02-28

Applicant: NORTHWESTERN UNIVERSITY

Inventor： Mark C. Hersam ,  Joohoon Kang

IPC: C01B19/00 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/18

CPC classification number: C01B19/007 ,  H01L31/032 ,  H01L31/035227 ,  H01L31/18 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/82 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/24 ,  C01P2006/40

Abstract: Preparation of two-dimensional indium selenide, other two-dimensional materials and related compositions via surfactant-free deoxygenated co-solvent systems.

公开(公告)号：US11677038B2

公开(公告)日：2023-06-13

申请号：US13118399

申请日：2011-05-28

Applicant: Achyut Kumar Dutta

Inventor： Achyut Kumar Dutta

IPC: H01L31/0687 ,  H01L31/0352 ,  H01L31/076 ,  H01L31/0236 ,  H01L31/0224 ,  H01L31/075 ,  H01L31/043 ,  H01L31/054

CPC classification number: H01L31/0687 ,  H01L31/02363 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/03529 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/043 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/548

Abstract: An apparatus and method for producing a perpetual energy harvester which harvests ambient near ultraviolet to infrared radiation and provides continual power regardless of the environment. The device seeks to harvest the largely overlooked blackbody radiation through use of a semiconductor thermal harvester, providing a continuous source of power. Additionally, increased power output is provided through a solar harvester. The solar and thermal harvesters are physically connected but electrically isolated.

公开(公告)号：US20190131469A1

公开(公告)日：2019-05-02

申请号：US15961218

申请日：2018-04-24

Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

Inventor： Hu-Cheol Lee ,  Hong-Gyu Park ,  Min-Soo Hwang ,  Jungkil Kim

IPC: H01L31/028 ,  H01L31/0352 ,  H01L31/112 ,  H01L31/18

CPC classification number: H01L31/0284 ,  H01L31/035227 ,  H01L31/09 ,  H01L31/10 ,  H01L31/1129 ,  H01L31/1804 ,  H04B10/00

Abstract: A photoelectric semiconductor nanowire device and a method for manufacturing the same. The photoelectric semiconductor nanowire device includes a semiconductor nanowire doped with a dopant of a first conductivity type and including crystal semiconductor segments which include at least one porous semiconductor segment and are connected to opposite ends of the porous semiconductor segment. A first electrode and a second electrode respectively are disposed in the crystal semiconductor segments around the porous semiconductor segment to provide an electrical connection. The crystal semiconductor segment includes a crystal semiconductor, and the porous semiconductor segment includes a porous semiconductor. The semiconductor nanowire provides a current according to the intensity of an external light when the external light is irradiated to the porous semiconductor segment.

公开(公告)号：US20180323359A1

公开(公告)日：2018-11-08

申请号：US15574065

申请日：2016-05-26

Applicant: George Mason University

Inventor： Qiliang Li ,  Sheng Yu ,  Abbas Arab

IPC: H01L35/16 ,  H01L35/02 ,  H01L35/34 ,  H01L41/18 ,  H01L41/113

CPC classification number: H01L35/16 ,  B82Y30/00 ,  H01L21/02568 ,  H01L31/035227 ,  H01L35/00 ,  H01L35/02 ,  H01L35/34 ,  H01L41/113 ,  H01L41/18 ,  H02N2/18

Abstract: Devices for generating electrical energy along with methods of fabrication and methods of use are disclosed. An example device can comprise one or more layers of a transition metal dichalcogenide material. An example device can comprise a mechano-electric generator. Another example device can comprise a thermoelectric generator.

公开(公告)号：US20180308998A1

公开(公告)日：2018-10-25

申请号：US15492267

申请日：2017-04-20

Applicant: King Abdulaziz University

Inventor： Wageh SWELM ,  Fahrettin Yakuphanoglu ,  Ahmed A. Al-Ghamdi ,  Yusuf Abdulaziz Al-Turki

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/072 ,  H01L31/0336 ,  H01L31/18 ,  G01J1/42

CPC classification number: H01L31/035218 ,  G01J1/42 ,  G01J5/0853 ,  G01J5/28 ,  G01J2001/4266 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/072 ,  H01L31/109 ,  H01L31/18 ,  Y02E10/50

Abstract: A photodiode comprising a photoactive spinel oxide layer is described. This photoactive spinel oxide layer forms a contact with both a light absorption layer of quantum dots, quantum wires, or quantum rods, and an inorganic substrate layer. In some embodiments, the inorganic substrate layer and the photoactive spinel oxide layer form an isotype junction. Methods of characterizing the photodiode are provided and demonstrate commercially relevant electrical and optoelectronic properties, particularly the ability to operate as a photodetector with a high photosensitivity. An economical process for preparing the photodiode is provided as well as applications.

公开(公告)号：US20180308941A1

公开(公告)日：2018-10-25

申请号：US15959248

申请日：2018-04-22

Applicant: Yu-Chen Chang

Inventor： Yu-Chen Chang

IPC: H01L29/227 ,  H01L21/02 ,  H01L31/0296

CPC classification number: H01L29/227 ,  H01L21/02554 ,  H01L31/02963 ,  H01L31/035227 ,  H01L31/074 ,  H01L31/109 ,  H01L31/18

Abstract: Various embodiments of a semiconductor device and related fabrication methods are disclosed. In one exemplary embodiment, the semiconductor device may include a substrate and a plurality of two-dimensional semiconductor films over the substrate, where a photogain of the two-dimensional films is above about 103 when measured at room temperature. In another exemplary embodiment, a semiconductor device may comprise a substrate comprising nanorods or nanodots and a plurality of two-dimensional films disposed on the substrate.

公开(公告)号：US20180219115A1

公开(公告)日：2018-08-02

申请号：US15928859

申请日：2018-03-22

Applicant: California Institute of Technology

Inventor： Shane Ardo ,  Matthew Shaner ,  Robert Coridan ,  Nicholas C. Strandwitz ,  James R. McKone ,  Katherine Fountaine ,  Harry A. Atwater ,  Nathan S. Lewis

IPC: H01L31/0352 ,  C25B1/00 ,  C01B3/04 ,  H01L31/078 ,  H01L31/0725 ,  H01L31/18

CPC classification number: H01L31/035281 ,  C01B3/042 ,  C25B1/003 ,  H01L31/035227 ,  H01L31/0725 ,  H01L31/078 ,  H01L31/1892 ,  Y02E10/50 ,  Y02E60/364

Abstract: This disclosure relates to photovoltaic and photo-electrosynthetic cells, devices, methods of making and using the same.