公开(公告)号：US20230148385A1

公开(公告)日：2023-05-11

申请号：US17983464

申请日：2022-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINHO JEONG ,  HYUNGEUN KIM ,  HEESOO KIM

IPC: H01F27/28 ,  H01F27/32 ,  H01F27/30

CPC classification number: H01F27/2804 ,  H01F27/323 ,  H01F27/303 ,  H01F2027/2809

Abstract: An on-chip inductor includes a semiconductor substrate, a plurality of insulating layers stacked over the semiconductor substrate, and first, second and third spiral-shaped coil patterns. The first, second and third spiral-shaped coil patterns are inductively coupled to each other and sequentially disposed on respective layers among the plurality of insulating layers. Further, the first, second and third spiral-shaped coil patterns have respective first ends overlapping each other. The on-chip inductor further includes a first via connecting the respective first ends of the first and second spiral-shaped coil patterns to each other, and a second via connecting the respective first ends of the second and third spiral-shaped coil patterns to each other, where the first and second vias overlap each other.