公开(公告)号：US20240305510A1

公开(公告)日：2024-09-12

申请号：US18470760

申请日：2023-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHANGKYU SEOL ,  DAEWOOK KIM ,  JINSOO LIM ,  YOUNGDON CHOI ,  JUNGHWAN CHOI

IPC: H04L27/04 ,  H04L1/00 ,  H04L27/20

CPC classification number: H04L27/04 ,  H04L1/0047 ,  H04L27/2007

Abstract: Disclosed is a method of operating an electronic device which communicates with an external electronic device. The method includes loading first user data including at least one first condition bit, first valid bits, and second valid bits, generating first and second intermediate data based on the first user data with reference to a target conversion rule of a conversion table of the electronic device, which corresponds to the at least one first condition bit, a sum of a first power value corresponding to the first intermediate data and a second power value corresponding to the second intermediate data being less than or equal to a power threshold value, generating first symbol data by performing first encoding on the first intermediate data, generating second symbol data by performing second encoding on the second intermediate data, and providing first encoded data including the first symbol data and the second symbol data.

公开(公告)号：US20220014351A1

公开(公告)日：2022-01-13

申请号：US17347055

申请日：2021-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： JU-YOUNG JUNG ,  JIYOUP KIM ,  CHANGKYU SEOL ,  PILSANG YOON ,  JINSOO LIM ,  MYUNGHOON CHOI

IPC: H04L9/00 ,  H04L9/08

Abstract: An electronic device includes a memory storing data from an external source, an application processing unit (APU) transmitting a secret key and public key generation command, an isolated execution environment (IEE) generating a secret key in response to the secret key generation command, generating a public key based on the secret key in response to the public key generation command, and storing the secret key, and a non-volatile memory performing write and read operations depending on a request of the APU. When the data are stored in the memory, the APU transmits a public key request to the IEE and in response the IEE transfers the public key to the APU through a mailbox protocol. The APU generates a ciphertext by performing homomorphic encryption on the data based on an encryption key in the public key, and classifies and stores the public key and the ciphertext in the non-volatile memory.

公开(公告)号：US20240048354A1

公开(公告)日：2024-02-08

申请号：US18379384

申请日：2023-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： JU-YOUNG JUNG ,  JIYOUP KIM ,  CHANGKYU SEOL ,  PILSANG YOON ,  JINSOO LIM ,  MYUNGHOON CHOI

IPC: H04L9/00 ,  H04L9/08

CPC classification number: H04L9/008 ,  H04L9/0819 ,  H04L9/0894 ,  H04L9/0869

Abstract: An electronic device includes a memory storing data from an external source, an application processing unit (APU) transmitting a secret key and public key generation command, an isolated execution environment (IEE) generating a secret key in response to the secret key generation command, generating a public key based on the secret key in response to the public key generation command, and storing the secret key, and a non-volatile memory performing write and read operations depending on a request of the APU. When the data are stored in the memory, the APU transmits a public key request to the IEE and in response the IEE transfers the public key to the APU through a mailbox protocol. The APU generates a ciphertext by performing homomorphic encryption on the data based on an encryption key in the public key, and classifies and stores the public key and the ciphertext in the non-volatile memory.

公开(公告)号：US20220294554A1

公开(公告)日：2022-09-15

申请号：US17590474

申请日：2022-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGKYU SEOL ,  JIYOUP KIM ,  HYEJEONG SO ,  MYOUNGBO KWAK ,  PILSANG YOON ,  SUCHEOL LEE ,  JINSOO LIM ,  YOUNGDON CHOI

IPC: H04L1/00 ,  G06F1/03

Abstract: Provided is a device and method for encoding and decoding to implement maximum transition avoidance coding with minimum overhead. An exemplary device performs encoding and/or decoding, by using sub-block lookup tables representing correlations between some bit values in a data burst and symbols, a combining lookup table selectively interconnecting the sub-block lookup tables based on remaining bit values of the data burst, and a codeword decoding lookup table designating the sub-block lookup tables corresponding to the symbols of each of received codewords.

公开(公告)号：US20210327896A1

公开(公告)日：2021-10-21

申请号：US17028029

申请日：2020-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JISUNG CHEON ,  JIYE NOH ,  BYUNGGON PARK ,  JINSOO LIM

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L23/522 ,  G11C7/18

Abstract: A vertical memory device includes a gate electrode structure, channels, a charge storage structure, and a division pattern. The gate electrode includes gate electrodes spaced apart from each other in a first direction. The channel extends through the gate electrode structure, and includes a first portion and a second portion on and contacting the first portion. The second portion includes a lower surface having a width less than that of an upper surface of the first portion. The charge storage structure covers an outer sidewall of the channel The division pattern extends between the channels in a second direction, and includes a first dummy channel and a first dummy charge storage structure covering a sidewall and a lower surface thereof. The first dummy channel includes the same material as that the channel, and the first dummy charge storage structure includes the same material as the charge storage structure.