公开(公告)号：US20210249094A1

公开(公告)日：2021-08-12

申请号：US16996266

申请日：2020-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KWANGWOO LEE ,  JINWOO HONG ,  YUNJUNG LEE

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/16 ,  G11C16/30 ,  G11C16/28 ,  G06N20/00 ,  G06F12/02 ,  G06F12/0891

Abstract: A storage device includes a nonvolatile memory device that includes a first storage area and a second storage area. A controller of the storage device controls the nonvolatile memory device and performs a read reclaim operation of reading data stored in the first storage area of the nonvolatile memory device and writing the read data in the second storage area. In the read reclaim operation, the controller is further configured to allow the nonvolatile memory device to perform sample read operations on the first storage area and to determine locations of the second storage area, at which the data are to be written, based on results of the sample read operations.