公开(公告)号：US20210358542A1

公开(公告)日：2021-11-18

申请号：US17391209

申请日：2021-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YUNJUNG LEE ,  CHANHA KIM ,  KANGHO ROH ,  HEEWON LEE

IPC: G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

Abstract: A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.

公开(公告)号：US20200110547A1

公开(公告)日：2020-04-09

申请号：US16416750

申请日：2019-05-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KWANGWOO LEE ,  CHANHA KIM ,  YUNJUNG LEE ,  JISOO KIM ,  SEUNGKYUNG RO ,  JINWOOK LEE ,  HEEWON LEE

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/26 ,  G06F11/10 ,  G11C29/52 ,  G06N20/00

Abstract: A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.

公开(公告)号：US20210249094A1

公开(公告)日：2021-08-12

申请号：US16996266

申请日：2020-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KWANGWOO LEE ,  JINWOO HONG ,  YUNJUNG LEE

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/16 ,  G11C16/30 ,  G11C16/28 ,  G06N20/00 ,  G06F12/02 ,  G06F12/0891

Abstract: A storage device includes a nonvolatile memory device that includes a first storage area and a second storage area. A controller of the storage device controls the nonvolatile memory device and performs a read reclaim operation of reading data stored in the first storage area of the nonvolatile memory device and writing the read data in the second storage area. In the read reclaim operation, the controller is further configured to allow the nonvolatile memory device to perform sample read operations on the first storage area and to determine locations of the second storage area, at which the data are to be written, based on results of the sample read operations.

公开(公告)号：US20230142506A1

公开(公告)日：2023-05-11

申请号：US17830677

申请日：2022-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YUNJUNG LEE ,  HEE-WOONG KANG

IPC: G11C16/04 ,  G11C16/26 ,  G11C16/08 ,  G11C29/42 ,  G11C5/06

CPC classification number: G11C16/0433 ,  G11C16/26 ,  G11C16/08 ,  G11C29/42 ,  G11C5/063

Abstract: A storage device includes a nonvolatile memory device and a memory controller allowing the nonvolatile memory device to perform a read operation on memory cells belonging to a selected page in a selected memory block. After the read operation, the memory controller allows the nonvolatile memory device to perform a first check read operation on memory cells of a first neighbor page while sequentially selecting sets of read voltages. After the first check read operation, the memory controller allows the nonvolatile memory device to perform a second check read operation on memory cells of a second neighbor page while sequentially selecting the sets of read voltages. In the second check read operation, the memory controller first selects a set of read voltages, which are used in the first check read operation in which error correction succeeds.