公开(公告)号：US20240192712A1

公开(公告)日：2024-06-13

申请号：US18468613

申请日：2023-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYEONJUN YUN ,  SANGSU YEH ,  MINSU LEE ,  JONGHWA KIM ,  JOOYEOP NAM

IPC: G05D23/19 ,  H01L21/683

CPC classification number: G05D23/1931 ,  H01L21/6833

Abstract: A temperature control system of a semiconductor manufacturing device includes first and second heating media storages that respectively store low-temperature heating media and high-temperature heating media, a mixing device including a mixing valve that mixes the low-temperature heating media and the high-temperature heating media at a predetermined mixing ratio, and a control device. The mixing device provides mixed heating media to a load, and distributes recovered heating media recovered from the load to the first and second heating media storages. The control device is configured to, by performing feed-forward control and feedback control over a mixing unit temperature using a relationship model between a reference temperature representing a temperature of heating media passing through the load and the mixing unit temperature which is a temperature of heating media output by the mixing valve, control the mixing ratio such that the reference temperature has a target reference temperature.