公开(公告)号：US20220139432A1

公开(公告)日：2022-05-05

申请号：US17243870

申请日：2021-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JI-YEON SHIN ,  DAEHOON NA ,  JONGHWA KIM

IPC: G11C7/22 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18

Abstract: A memory package includes; a first memory chip including first memory pads, and a buffer chip including first buffer pads respectively connected with the first memory pads and second buffer pads connected with an external device. The buffer chip respectively communicates signals received via the second buffer pads to the first buffer pads in response to a swap enable signal having a disabled state, and the buffer chip swaps signals received via the second buffer pads to generate first swapped signals, and respectively communicates the first swapped signals to the first buffer pads in response to the swap enable signal having an enabled state.

公开(公告)号：US20220129199A1

公开(公告)日：2022-04-28

申请号：US17318597

申请日：2021-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KUN-WOO SONG ,  JONGHWA KIM ,  KYUNGYONG JEOUNG

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/08

Abstract: Disclosed is a storage device, which includes a nonvolatile memory device including a first memory block connected with a plurality of first word lines, and a memory controller connected with the nonvolatile memory device through a plurality of data lines. The memory controller sends a first command to the nonvolatile memory device through the plurality of data lines during a first command input period, sends a parameter to the nonvolatile memory device through the plurality of data lines during an address input period, and sends a second command to the nonvolatile memory device through the plurality of data lines during a second command input period. The nonvolatile memory device applies a turn-on voltage to all the plurality of first word lines connected with the first memory block based on the parameter during a first time in response to the first command and the second command.

公开(公告)号：US20240192712A1

公开(公告)日：2024-06-13

申请号：US18468613

申请日：2023-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYEONJUN YUN ,  SANGSU YEH ,  MINSU LEE ,  JONGHWA KIM ,  JOOYEOP NAM

IPC: G05D23/19 ,  H01L21/683

CPC classification number: G05D23/1931 ,  H01L21/6833

Abstract: A temperature control system of a semiconductor manufacturing device includes first and second heating media storages that respectively store low-temperature heating media and high-temperature heating media, a mixing device including a mixing valve that mixes the low-temperature heating media and the high-temperature heating media at a predetermined mixing ratio, and a control device. The mixing device provides mixed heating media to a load, and distributes recovered heating media recovered from the load to the first and second heating media storages. The control device is configured to, by performing feed-forward control and feedback control over a mixing unit temperature using a relationship model between a reference temperature representing a temperature of heating media passing through the load and the mixing unit temperature which is a temperature of heating media output by the mixing valve, control the mixing ratio such that the reference temperature has a target reference temperature.

公开(公告)号：US20240274172A1

公开(公告)日：2024-08-15

申请号：US18133247

申请日：2023-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JI-YEON SHIN ,  DAEHOON NA ,  JONGHWA KIM

IPC: G11C7/22 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18

CPC classification number: G11C7/22 ,  H01L25/0652 ,  H01L25/105 ,  H01L25/18 ,  H01L2225/06506 ,  H01L2225/06562 ,  H01L2225/06586

Abstract: A memory package includes; a first memory chip including first memory pads, and a buffer chip including first buffer pads respectively connected with the first memory pads and second buffer pads connected with an external device. The buffer chip respectively communicates signals received via the second buffer pads to the first buffer pads in response to a swap enable signal having a disabled state, and the buffer chip swaps signals received via the second buffer pads to generate first swapped signals, and respectively communicates the first swapped signals to the first buffer pads in response to the swap enable signal having an enabled state.