公开(公告)号：US20220310649A1

公开(公告)日：2022-09-29

申请号：US17680413

申请日：2022-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEEYONG KIM ,  JUNGHWAN LEE

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L25/18

Abstract: A semiconductor device comprising: a substrate; an electrode structure disposed on the substrate while extending in a first direction, the electrode structure including a plurality of electrodes stacked in a second direction which is a vertical direction of the substrate; a bit line disposed on the electrode structure; vertical structures extending through the electrode structure in the second direction and contacting the substrate, each of the vertical structures including a vertical semiconductor pattern electrically connected to the bit line, and a data storage pattern surrounding a side wall of the vertical semiconductor pattern; common source plugs extending through the electrode structure in the second direction and contacting the substrate under a condition that the vertical structures are disposed among the common source plugs; and spacers respectively disposed to surround side walls of the common source plugs, each of the spacers including regions respectively having different nitride (N) concentrations.