公开(公告)号：US20220310649A1

公开(公告)日：2022-09-29

申请号：US17680413

申请日：2022-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEEYONG KIM ,  JUNGHWAN LEE

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L25/18

Abstract: A semiconductor device comprising: a substrate; an electrode structure disposed on the substrate while extending in a first direction, the electrode structure including a plurality of electrodes stacked in a second direction which is a vertical direction of the substrate; a bit line disposed on the electrode structure; vertical structures extending through the electrode structure in the second direction and contacting the substrate, each of the vertical structures including a vertical semiconductor pattern electrically connected to the bit line, and a data storage pattern surrounding a side wall of the vertical semiconductor pattern; common source plugs extending through the electrode structure in the second direction and contacting the substrate under a condition that the vertical structures are disposed among the common source plugs; and spacers respectively disposed to surround side walls of the common source plugs, each of the spacers including regions respectively having different nitride (N) concentrations.

公开(公告)号：US20130175693A1

公开(公告)日：2013-07-11

申请号：US13723303

申请日：2012-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAE SOO KIM ,  JEEYONG KIM ,  VIET HA NGUYEN ,  JAIHYUK SONG ,  SANGHOON AHN ,  GILHEYUN CHOI

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L23/5329 ,  H01L23/53295 ,  H01L27/11524 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor device includes a substrate, at least one transistor integrated with the substrate, an interlayer insulating layer on the substrate, a conductive line extending within the interlayer insulating layer and electrically connected to the transistor, and at least one capping layer containing carbon in an amount of about 2 to about 7.5 atomic percent. The capping layer may cover the interlayer insulating layer in which the conductive line extends.

Abstract translation: 半导体器件包括衬底，与衬底集成的至少一个晶体管，衬底上的层间绝缘层，在层间绝缘层内延伸并电连接到晶体管的导电线，以及至少一个含有碳的覆盖层 量为约2至约7.5原子％。 覆盖层可以覆盖导线延伸的层间绝缘层。