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公开(公告)号:US20180151556A1
公开(公告)日:2018-05-31
申请号:US15683050
申请日:2017-08-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyo Seok CHOI , Chul Sung KIM , Jae Eun LEE
CPC classification number: H01L27/0629 , H01L23/485 , H01L28/20 , H01L28/24 , H01L29/0649 , H01L29/0673 , H01L29/66484 , H01L29/66545 , H01L29/6656 , H01L29/775 , H01L29/7831 , H01L29/785
Abstract: A semiconductor device includes a substrate, a first recess formed in the substrate, a first source/drain filling the first recess, a vertical metal resistor on the first source/drain, and an insulating liner separating the metal resistor from the first source/drain, with the vertical metal resistor being between two gate electrodes.
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公开(公告)号:US20190221513A1
公开(公告)日:2019-07-18
申请号:US16359307
申请日:2019-03-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyong Soon CHO , Jae Eun LEE
IPC: H01L23/50 , H01L25/065 , H01L23/00 , H01L23/31
Abstract: A semiconductor package includes a substrate, a first semiconductor chip and a second semiconductor chip adjacent to each other on the substrate, and a plurality of bumps on lower surfaces of the first and second semiconductor chips. The first and second semiconductor chips have facing first side surfaces and second side surfaces opposite to the first side surfaces. The bumps are arranged at a higher density in first regions adjacent to the first side surfaces than in second regions adjacent to the second side surfaces.
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公开(公告)号:US20180337120A1
公开(公告)日:2018-11-22
申请号:US15795448
申请日:2017-10-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyong Soon CHO , Jae Eun LEE
IPC: H01L23/50
CPC classification number: H01L23/50 , H01L2924/1431
Abstract: A semiconductor package includes a substrate, a first semiconductor chip and a second semiconductor chip adjacent to each other on the substrate, and a plurality of bumps on lower surfaces of the first and second semiconductor chips. The first and second semiconductor chips have facing first side surfaces and second side surfaces opposite to the first side surfaces. The bumps are arranged at a higher density in first regions adjacent to the first side surfaces than in second regions adjacent to the second side surfaces.
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