公开(公告)号：US10177278B2

公开(公告)日：2019-01-08

申请号：US15437970

申请日：2017-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Hyun Kim ,  Jae Ryung Yoo ,  Gi Bum Kim ,  Ha Yeong Son ,  Sang Seok Lee

IPC: H01L33/48 ,  H01L33/38 ,  H01L33/44

Abstract: A semiconductor light emitting device includes: a multilayer semiconductor body having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and at least one recess exposing the first conductivity-type semiconductor layer, and an insulating part on an internal sidewall of the at least one recess and an upper surface of the second conductivity-type semiconductor layer. The insulating part has an insulating spacer on the internal sidewall of the recess, and a lateral surface of the insulating spacer has a surface without an angular point from an upper end to a lower end thereof.