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1.发明授权Semiconductor light emitting device and semiconductor light emitting apparatus having the same 有权半导体发光器件和具有该半导体发光器件的半导体发光器件公开(公告)号：US09196812B2
公开(公告)日：2015-11-24
申请号：US14543481
申请日：2014-11-17
发明人： Myong Soo Cho , Yong-Il Kim , Jin Ha Kim , Kwang Min Song , Sang Seok Lee
CPC分类号： H01L33/62 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/44 , H01L2224/16225 , H01L2224/16245 , H01L2933/0091
摘要： In example embodiments, a semiconductor light emitting device includes a light emitting structure, first and second insulating layers, a barrier metal layer, and an electrode. The light emitting structure includes an active layer between a first and second conductivity-type semiconductor layer. The first insulating layer is on the light emitting structure and defines a first one and a second one of first openings that respectively expose the first and second conductivity-type semiconductor layers. The barrier metal layer is on the first insulating layer and electrically connected to the first and second conductivity-type semiconductor layers through the first and second one of the first openings. The second insulating layer is on the barrier metal layer and defines a second opening that partially exposes the barrier metal layer. The electrode is on the barrier metal layer and electrically connected to the first and second conductivity-type semiconductor layers through the barrier metal layer.
摘要翻译： 在示例性实施例中，半导体发光器件包括发光结构，第一和第二绝缘层，阻挡金属层和电极。 发光结构包括在第一和第二导电类型半导体层之间的有源层。 第一绝缘层位于发光结构上并且限定分别暴露第一和第二导电类型半导体层的第一开口和第二开口中的第一绝缘层。 阻挡金属层位于第一绝缘层上，并通过第一和第二开口与第一和第二导电型半导体层电连接。 第二绝缘层位于阻挡金属层上并且限定了部分地暴露阻挡金属层的第二开口。 电极在阻挡金属层上，并通过阻挡金属层与第一和第二导电型半导体层电连接。
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公开(公告)号：US10177278B2
公开(公告)日：2019-01-08
申请号：US15437970
申请日：2017-02-21
发明人： Ju Hyun Kim , Jae Ryung Yoo , Gi Bum Kim , Ha Yeong Son , Sang Seok Lee
摘要： A semiconductor light emitting device includes: a multilayer semiconductor body having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and at least one recess exposing the first conductivity-type semiconductor layer, and an insulating part on an internal sidewall of the at least one recess and an upper surface of the second conductivity-type semiconductor layer. The insulating part has an insulating spacer on the internal sidewall of the recess, and a lateral surface of the insulating spacer has a surface without an angular point from an upper end to a lower end thereof.
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公开(公告)号：US08946751B2
公开(公告)日：2015-02-03
申请号：US14015095
申请日：2013-08-30
发明人： Jin Bock Lee , Ki Seok Kim , Je Won Kim , Ju-Bin Seo , Seong Seok Yang , Sang Seok Lee , Joon Sub Lee
摘要： A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.
摘要翻译： 半导体发光器件包括依次层叠在基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第一电极设置在第一导电型半导体层的一部分上。 电流扩散层设置在第二导电型半导体层上，并且包括露出第二导电型半导体层的一部分的开口。 第二电极覆盖电流扩散层的一部分和第二导电型半导体层的暴露部分，其中电流扩散层的部分靠近开口。
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公开(公告)号：US10128425B2
公开(公告)日：2018-11-13
申请号：US15863724
申请日：2018-01-05
发明人： Joon Woo Jeon , Sang Seok Lee , Hyun Kwon Hong
摘要： A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.
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公开(公告)号：US09905309B2
公开(公告)日：2018-02-27
申请号：US15393838
申请日：2016-12-29
发明人： Hoon Jin Bang , Sang Seok Lee
CPC分类号： G11C17/18 , G11C7/14 , G11C11/5692 , G11C17/16 , G11C2207/063
摘要： A one-time programmable (OTP) memory device includes an OTP memory cell array comprising a plurality of dummy cells and a plurality of main cell groups of main cells and an access circuit configured to write data to at least two of the cells simultaneously. The arrangement of the dummy cells and the main cell groups may allow for the reliable writing of multi-bit data to the memory array. Each of the main cell groups may include a plurality of main cells which are connected to word lines, respectively, and to bit lines, respectively. Each of the main cells may be writable and each of the dummy cells may be unwritable. Each of the main cells may include a contact layer, and the dummy cells might not include the contact layer. A supply voltage may be applied to the OTP memory cell array through the contact layer.
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公开(公告)号：US09484500B2
公开(公告)日：2016-11-01
申请号：US14300642
申请日：2014-06-10
发明人： Ki Seok Kim , Sang Seok Lee , Su Yeol Lee , Chan Mook Lim
CPC分类号： H01L33/42 , H01L33/38 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction. The second electrode may include a transparent electrode part positioned on the second conductivity type semiconductor layer and including at least one opening therein, at least one reflective part spaced apart from the transparent electrode part within the opening and disposed in the pad region and the finger region, and a bonding part positioned on at least one portion of the reflective part and including a plurality of bonding finger parts spaced apart from each other in the finger region and a bonding pad part disposed in the pad region.
摘要翻译： 提供半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 该器件还可以包括连接到第一导电类型半导体层的第一电极和连接到第二导电类型半导体层的第二电极，并且具有在一个方向上从焊盘区域延伸的焊盘区域和手指区域。 第二电极可以包括位于第二导电类型半导体层上并且包括其中的至少一个开口的透明电极部分，至少一个反射部分与开口内的透明电极部分间隔开并且设置在焊盘区域中，并且指状区域 以及位于所述反射部分的至少一部分上并且包括在所述手指区域中彼此间隔开的多个接合指状部分的接合部分和设置在所述焊盘区域中的接合焊盘部分。
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公开(公告)号：US20140070252A1
公开(公告)日：2014-03-13
申请号：US14015095
申请日：2013-08-30
发明人： JIN BOCK LEE , Ki Seok Kim , Je Won Kim , Ju-Bin Seo , Seong-Seok Yang , Sang Seok Lee , Joon Sub Lee
IPC分类号： H01L33/36
摘要： A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.
摘要翻译： 半导体发光器件包括依次层叠在基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第一电极设置在第一导电型半导体层的一部分上。 电流扩散层设置在第二导电型半导体层上，并且包括露出第二导电型半导体层的一部分的开口。 第二电极覆盖电流扩散层的一部分和第二导电型半导体层的暴露部分，其中电流扩散层的部分靠近开口。
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公开(公告)号：US09887334B1
公开(公告)日：2018-02-06
申请号：US15443202
申请日：2017-02-27
发明人： Joon Woo Jeon , Sang Seok Lee , Hyun Kwon Hong
CPC分类号： H01L33/62 , H01L33/24 , H01L33/38 , H01L33/44 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
摘要： A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.
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公开(公告)号：US09076928B2
公开(公告)日：2015-07-07
申请号：US13906044
申请日：2013-05-30
发明人： Seong Seok Yang , Ki Seok Kim , Je Won Kim , Ju Bin Seo , Sang Seok Lee , Joon Sub Lee , Jin Bock Lee
摘要： A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.
摘要翻译： 提供了半导体发光器件，并且包括具有第一下导电型半导体层和第二下导电型半导体层的保护元件。 第一和第二下电极分别连接到第一下导电型半导体层和第二下导电型半导体层。 发光结构包括依次形成在保护元件上的第一上导电型半导体层，有源层和第二上导电型半导体层。 第一上电极和第二上电极分别连接到第一上导电型半导体层和第二上导电型半导体层。
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