公开(公告)号：US11322071B2

公开(公告)日：2022-05-03

申请号：US17090720

申请日：2020-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyunghoon Chung ,  Jaesung Kang ,  Jihyun Lee ,  Jeongwoo Lim ,  Yunseok Jang ,  Jaewon Choi

IPC: G09G3/20 ,  H03F3/45

Abstract: An operational amplifier includes an input stage with a first main input unit, a first auxiliary input unit, a second main input unit and a second auxiliary input unit, an amplification stage with a first current mirror receiving currents from the first main input unit and the first auxiliary input unit, and a second current mirror receiving currents from the second main input unit and the second auxiliary input unit, an output stage receiving voltages from the first current mirror and the second current mirror, a voltage storage unit storing an intermediate voltage based on an output signal generated by the output stage during at least one of a first operation period and a second operation period, and a switching unit that differently controls a first feedback path between the output stage and the input stage and a second feedback path between the output stage to the voltage storage unit in accordance with the first operation period and the second operation period.

公开(公告)号：US11189491B2

公开(公告)日：2021-11-30

申请号：US16733447

申请日：2020-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul-Ho Kim ,  Yool Kang ,  Jaesung Kang ,  Jinphil Choi

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768

Abstract: A method of forming a mask pattern and a method of fabricating a semiconductor device, the method of forming a mask pattern including providing a substrate including a plurality of patterns thereon; forming a mask material solution layer such that the mask material solution layer covers the patterns on the substrate; and applying a liquid material to remove an upper portion of the mask material solution layer, wherein the mask material solution layer includes a fluorine additive concentrated at the upper portion of the mask material solution layer.