公开(公告)号：US20230299149A1

公开(公告)日：2023-09-21

申请号：US18325335

申请日：2023-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sahwan HONG ,  Hanki LEE ,  Jeongmin LEE

IPC: H01L29/167 ,  H01L29/08 ,  H01L29/417

CPC classification number: H01L29/167 ,  H01L29/0847 ,  H01L29/41775

Abstract: A semiconductor device includes an active region on a substrate, a gate structure on the substrate and intersecting the active region, a source/drain region on the active region on both sides of the gate structure and including silicon (Si), and a contact structure on the source/drain region. The source/drain region includes a shallow doping region doped with germanium (Ge) and is in an upper region including an upper surface of the source/drain region. A concentration of germanium (Ge) in the shallow doping region gradually decreases from the upper surface of the source/drain region toward an upper surface of the substrate in a direction that is perpendicular to an upper surface of the substrate.

公开(公告)号：US20220181446A1

公开(公告)日：2022-06-09

申请号：US17370551

申请日：2021-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sahwan HONG ,  Hanki LEE ,  Jeongmin LEE

IPC: H01L29/167 ,  H01L29/417 ,  H01L29/08

Abstract: A semiconductor device includes an active region on a substrate, a gate structure on the substrate and intersecting the active region, a source/drain region on the active region on both sides of the gate structure and including silicon (Si), and a contact structure on the source/drain region. The source/drain region includes a shallow doping region doped with germanium (Ge) and is in an upper region including an upper surface of the source/drain region. A concentration of germanium (Ge) in the shallow doping region gradually decreases from the upper surface of the source/drain region toward an upper surface of the substrate in a direction that is perpendicular to an upper surface of the substrate.