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公开(公告)号:US10224204B1
公开(公告)日:2019-03-05
申请号:US15891391
申请日:2018-02-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dong-Hoon Khang , Dong-Woo Kang , Moon-Han Park , Ji-Ho Yoo , Chong-Kwang Chang
IPC: H01L21/266 , H01L21/8238 , H01L21/311 , H01L21/768
Abstract: An integrated circuit device is manufactured by a method including forming a stacked mask structure including a carbon-containing film and a silicon-containing organic anti-reflective film is on a substrate, forming a silicon-containing organic anti-reflective pattern by etching the silicon-containing organic anti-reflective film, and forming a composite mask pattern including a carbon-containing mask pattern and a profile control liner lining interior surfaces of the carbon-containing mask pattern by etching the carbon-containing film while using the silicon-containing organic anti-reflective pattern as an etch mask. Ions are implanted into the substrate through a plurality of spaces defined by the composite mask pattern.