公开(公告)号：US20230282703A1

公开(公告)日：2023-09-07

申请号：US17894269

申请日：2022-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Jun KIM ,  Jin Beom Park ,  Kwan Young Chun

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/786 ,  H01L29/775

CPC classification number: H01L29/0673 ,  H01L29/41733 ,  H01L29/78696 ,  H01L29/775

Abstract: A semiconductor device is provided. The semiconductor device includes a lower substrate; a lower active pattern which extends in a first direction on the lower substrate; a first lower gate electrode which extends in a second direction on the lower active pattern; an upper substrate on the first lower gate electrode; an upper active pattern which extends in the first direction on the upper substrate, wherein the upper active pattern is spaced apart from the lower active pattern in each of the second direction and a vertical direction; a first upper gate electrode which extends in the second horizontal direction on the upper active pattern, wherein the first upper gate electrode at least partially overlaps the first lower gate electrode in the vertical direction; and a first gate contact which is spaced apart from the first upper gate electrode in the second horizontal direction.