公开(公告)号：US10580736B2

公开(公告)日：2020-03-03

申请号：US16441433

申请日：2019-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Yeol Kim ,  Ji Won Kang ,  Chung Hwan Shin ,  Jin Il Lee ,  Sang Jin Hyun

IPC: H01L21/285 ,  H01L23/532 ,  H01L23/528 ,  H01L29/06 ,  H01L23/535 ,  H01L29/417 ,  B24B37/04 ,  H01L21/768 ,  H01L21/321 ,  C23C16/455 ,  H01L23/485

Abstract: A semiconductor device and a method of forming the same, the semiconductor device including an insulating structure having an opening; a conductive pattern disposed in the opening; a barrier structure covering a bottom surface of the conductive pattern, the barrier structure extending between the conductive pattern and side walls of the opening; and a nucleation structure disposed between the conductive pattern and the barrier structure. The nucleation structure includes a first nucleation layer that contacts the barrier structure, and a second nucleation layer that contacts the conductive pattern, and a top end portion of the second nucleation layer is higher than a top end portion of the first nucleation layer.

公开(公告)号：US10366955B2

公开(公告)日：2019-07-30

申请号：US15806527

申请日：2017-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Yeol Kim ,  Ji Won Kang ,  Chung Hwan Shin ,  Jin Il Lee ,  Sang Jin Hyun

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L29/06 ,  H01L23/535 ,  H01L29/417 ,  B24B37/04 ,  H01L21/321 ,  H01L21/285 ,  C23C16/455

Abstract: A semiconductor device and a method of forming the same, the semiconductor device including an insulating structure having an opening; a conductive pattern disposed in the opening; a barrier structure covering a bottom surface of the conductive pattern, the barrier structure extending between the conductive pattern and side walls of the opening; and a nucleation structure disposed between the conductive pattern and the barrier structure. The nucleation structure includes a first nucleation layer that contacts the barrier structure, and a second nucleation layer that contacts the conductive pattern, and a top end portion of the second nucleation layer is higher than a top end portion of the first nucleation layer.