公开(公告)号：US20230378263A1

公开(公告)日：2023-11-23

申请号：US18085886

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Kyu JANG ,  Byoung Hoon LEE ,  Chan Hyeong LEE ,  Nam Gyu CHO

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L29/775

CPC classification number: H01L29/0673 ,  H01L29/4236 ,  H01L29/6656 ,  H01L29/78696 ,  H01L29/775

Abstract: A semiconductor device includes an active pattern; gate spacers on the active pattern defining a gate trench; a gate insulating layer along a sidewall and a bottom surface of the gate trench; a first conductive layer on the gate insulating layer; a second conductive layer on the first conductive layer in the gate trench; a third conductive layer on the second conductive layer in the gate trench and including a first portion between parts of the second conductive layer, and a second portion on the first portion and in contact with an upper surface of the second conductive layer; and a capping pattern on the second and third conductive layers and including a portion between the gate insulating layer and the second portion, and in contact with a sidewall of the second portion, wherein a width of the second portion is greater than a width of the first portion.