公开(公告)号：US11239269B2

公开(公告)日：2022-02-01

申请号：US16451412

申请日：2019-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook-tae Kim ,  Jin-gyun Kim ,  Soo-jin Hong

IPC: H01L27/146 ,  H04N5/341

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.

公开(公告)号：US12068337B2

公开(公告)日：2024-08-20

申请号：US18144969

申请日：2023-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook-tae Kim ,  Jin-gyun Kim ,  Soo-jin Hong

IPC: H01L27/146 ,  H04N25/40

CPC classification number: H01L27/14605 ,  H04N25/40

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.

公开(公告)号：US11652113B2

公开(公告)日：2023-05-16

申请号：US17519701

申请日：2021-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook-tae Kim ,  Jin-gyun Kim ,  Soo-jin Hong

IPC: H01L27/146 ,  H04N5/341

CPC classification number: H01L27/14605 ,  H04N5/341

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.