公开(公告)号：US20250169174A1

公开(公告)日：2025-05-22

申请号：US18790772

申请日：2024-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyuman Hwang ,  Jinho Bae ,  Jaewon Jeong ,  Sungil Park

IPC: H01L27/092 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a lower transistor and an upper transistor located at a higher vertical level than the lower transistor. The lower transistor includes a lower source/drain region, and a lower gate structure and a lower isolation insulating layer that are in contact with a side surface of the lower source/drain region. The upper transistor includes an upper source/drain region, and an upper gate structure and an upper isolation insulating layer that are in contact with a side surface of the upper source/drain region. A bottom surface of the lower isolation insulating layer is located at a same vertical level as a bottom surface of the lower gate structure.