公开(公告)号：US20220077143A1

公开(公告)日：2022-03-10

申请号：US17199720

申请日：2021-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinhyeok SONG ,  Mingeun SONG

IPC: H01L27/088 ,  H01L23/544 ,  H01L23/66

Abstract: An integrated circuit device including an active region; an active cutting region at a side of the active region in a first direction; a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region; a gate pattern extending across the active region and the fin active pattern in a second direction perpendicular to the first direction, the gate pattern not being in the active cutting region; and an isolated gate contact region in contact with the gate pattern outside of the active region.

公开(公告)号：US20250142947A1

公开(公告)日：2025-05-01

申请号：US19009248

申请日：2025-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhyeok SONG ,  Mingeun SONG

IPC: H10D84/83 ,  H01L23/544 ,  H01L23/66

Abstract: An integrated circuit device including an active region; an active cutting region at a side of the active region in a first direction; a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region; a gate pattern extending across the active region and the fin active pattern in a second direction perpendicular to the first direction, the gate pattern not being in the active cutting region; and an isolated gate contact region in contact with the gate pattern outside of the active region.

公开(公告)号：US20230290777A1

公开(公告)日：2023-09-14

申请号：US18198496

申请日：2023-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinhyeok SONG ,  Mingeun SONG

IPC: H01L27/088 ,  H01L23/544 ,  H01L23/66

CPC classification number: H01L27/088 ,  H01L23/544 ,  H01L23/66

Abstract: An integrated circuit device including an active region; an active cutting region at a side of the active region in a first direction; a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region; a gate pattern extending across the active region and the fin active pattern in a second direction perpendicular to the first direction, the gate pattern not being in the active cutting region; and an isolated gate contact region in contact with the gate pattern outside of the active region.