公开(公告)号：US20220399284A1

公开(公告)日：2022-12-15

申请号：US17574212

申请日：2022-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Huichul SHIN ,  Hyungjin LEE ,  Jinhong PARK ,  Mingeun SONG ,  Euiyoung JEONG ,  Hiroki FUJII

IPC: H01L23/552

Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate with first-conductivity-type impurities; first and second active regions provided on the substrate; a first deep element isolation layer surrounding the first active region; a second deep element isolation layer surrounding the second active region; a suction region surrounding the first and second deep element isolation layers, the suction region including the first-conductivity-type impurities; a well region provided in the substrate between the first and second active regions, the well region including second-conductivity-type impurities different from the first-conductivity-type impurities; a shallow element isolation layer provided between the suction region and the well region; and a guard structure connected to the suction region. The substrate includes a signal path portion that is provided between a top surface of the substrate and the well region, and surrounds an upper portion of the well region.

公开(公告)号：US20250142947A1

公开(公告)日：2025-05-01

申请号：US19009248

申请日：2025-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhyeok SONG ,  Mingeun SONG

IPC: H10D84/83 ,  H01L23/544 ,  H01L23/66

Abstract: An integrated circuit device including an active region; an active cutting region at a side of the active region in a first direction; a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region; a gate pattern extending across the active region and the fin active pattern in a second direction perpendicular to the first direction, the gate pattern not being in the active cutting region; and an isolated gate contact region in contact with the gate pattern outside of the active region.

公开(公告)号：US20230290777A1

公开(公告)日：2023-09-14

申请号：US18198496

申请日：2023-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinhyeok SONG ,  Mingeun SONG

IPC: H01L27/088 ,  H01L23/544 ,  H01L23/66

CPC classification number: H01L27/088 ,  H01L23/544 ,  H01L23/66

Abstract: An integrated circuit device including an active region; an active cutting region at a side of the active region in a first direction; a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region; a gate pattern extending across the active region and the fin active pattern in a second direction perpendicular to the first direction, the gate pattern not being in the active cutting region; and an isolated gate contact region in contact with the gate pattern outside of the active region.

公开(公告)号：US20220077143A1

公开(公告)日：2022-03-10

申请号：US17199720

申请日：2021-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinhyeok SONG ,  Mingeun SONG

IPC: H01L27/088 ,  H01L23/544 ,  H01L23/66

Abstract: An integrated circuit device including an active region; an active cutting region at a side of the active region in a first direction; a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region; a gate pattern extending across the active region and the fin active pattern in a second direction perpendicular to the first direction, the gate pattern not being in the active cutting region; and an isolated gate contact region in contact with the gate pattern outside of the active region.