公开(公告)号：US20200234947A1

公开(公告)日：2020-07-23

申请号：US16733447

申请日：2020-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul-Ho KIM ,  Yool KANG ,  Jaesung KANG ,  Jinphil CHOI

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/02

Abstract: A method of forming a mask pattern and a method of fabricating a semiconductor device, the method of forming a mask pattern including providing a substrate including a plurality of patterns thereon; forming a mask material solution layer such that the mask material solution layer covers the patterns on the substrate; and applying a liquid material to remove an upper portion of the mask material solution layer, wherein the mask material solution layer includes a fluorine additive concentrated at the upper portion of the mask material solution layer.