公开(公告)号：US20250132133A1

公开(公告)日：2025-04-24

申请号：US18640999

申请日：2024-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisoo Im ,  Dongwan Kim ,  Minsung Kim ,  Siyoung Koh ,  Younseon Wang ,  Junho Im

IPC: H01J37/32 ,  H01J37/08

Abstract: A substrate processing apparatus comprises a process chamber, a stage in the process chamber, the stage supporting a substrate, and a grid in the process chamber and upwardly spaced apart from the stage. The grid includes a dielectric plate having a central axis that extends in a first direction, a first electrode plate embedded in the dielectric plate, a second electrode plate downwardly spaced apart from the first electrode plate and embedded in the dielectric plate, and a third electrode plate downwardly spaced apart from the second electrode plate and embedded in the dielectric plate.