公开(公告)号：US20230299016A1

公开(公告)日：2023-09-21

申请号：US18110233

申请日：2023-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myoungsoo Kim ,  Jisung Kim

IPC: H01L23/00 ,  H01L23/522

CPC classification number: H01L23/562 ,  H01L23/5226 ,  H01L23/564 ,  H01L2224/0401 ,  H01L24/05 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/13171 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L24/13

Abstract: A semiconductor device includes a substrate including a circuit region and a protection region surrounding the circuit region, a plurality of insulating layers sequentially provided on the substrate, a moisture blocking structure extending in the plurality of insulating layers in the protection region of the substrate and surrounding the circuit region, the moisture blocking structure including a first plurality of wiring layers vertically provided on a surface of the substrate, where an uppermost wiring layer of the first plurality of wiring layers comprises a first via, and a metal wiring provided on the first via, and a crack stopper extending in the plurality of insulating layers in the protection region of the substrate and surrounding the moisture blocking structure, the crack stopper including a second plurality of wiring layers vertically provided on the surface of the substrate.