公开(公告)号：US20250040303A1

公开(公告)日：2025-01-30

申请号：US18775217

申请日：2024-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghak KIM ,  Punjae CHOI ,  Sooyoung PARK ,  Shigeru INOUE

IPC: H01L33/32 ,  H01L25/075 ,  H01L33/02 ,  H01L33/04 ,  H01L33/14

Abstract: A light emitting element is provided. The light emitting element includes: a light emitting stack including an active layer between an N-type nitride semiconductor layer and a P-type nitride semiconductor layer, the light emitting stack having a width of 5 nm or more and 200 μm or less; a first electrode connected to the N-type nitride semiconductor layer; and a second electrode connected to the P-type nitride semiconductor layer. The P-type nitride semiconductor layer has a first surface, adjacent to the active layer, and a second surface, opposite to the first surface, and includes AlxInyGazN (0≤x