公开(公告)号：US20210104671A1

公开(公告)日：2021-04-08

申请号：US16741936

申请日：2020-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seulji SONG ,  Jonguk KIM ,  Kyusul PARK ,  Woohyun PARK ,  Jonghyun PAEK

IPC: H01L45/00 ,  H01L27/24

Abstract: A semiconductor device includes a plurality of first conductive lines disposed on a substrate, a plurality of second conductive lines intersecting the plurality of first conductive lines, and a plurality of cell structures interposed between the plurality of first conductive lines and the plurality of second conductive lines. At least one among the plurality of cell structures includes a first electrode, a switching element disposed on the first electrode, a second electrode disposed on the switching element, a first metal pattern disposed on the second electrode, a variable resistance pattern interposed between the first metal pattern and at least one among the plurality of second conductive lines, and a first spacer disposed on a sidewall of the variable resistance pattern, a sidewall of the first metal pattern and a sidewall of the second electrode.

公开(公告)号：US20250151286A1

公开(公告)日：2025-05-08

申请号：US18680492

申请日：2024-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun PAEK ,  Seulji SONG

IPC: H10B63/00 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786 ,  H10N70/00

Abstract: A semiconductor device includes a plurality of word lines extending in a first direction; a plurality of bit lines extending in a second direction crossing the first direction; a plurality of memory cells in a plurality of areas in which the plurality of word lines and the plurality of bit lines intersect; and a semiconductor element connected to at least one of the plurality of word lines and the plurality of bit lines, the semiconductor element including a first active pattern and a second active pattern overlapping the first active pattern along a height direction perpendicular to the first and second directions.