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公开(公告)号：US20250046740A1
公开(公告)日：2025-02-06
申请号：US18637827
申请日：2024-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jubin SEO , Dongchan LIM , Sujeong PARK , Junkyoung LEE
IPC: H01L23/00 , H01L25/065
Abstract: A semiconductor chip structure includes a plurality of semiconductor chips. A bonding electrode included in each of the semiconductor chips is filled with nanotwin copper and fine grain copper is disposed in at least a portion of the bonding electrode.
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