公开(公告)号：US20200303544A1

公开(公告)日：2020-09-24

申请号：US16533073

申请日：2019-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Chong PARK ,  Jun Gu Kang ,  Yong Sang Jeong

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/06

Abstract: A semiconductor device is provided. The semiconductor device comprises a substrate, a gate electrode on the substrate, an element isolation film in the substrate and spaced apart from the gate electrode, an impurity region between the element isolation film and the gate electrode, the impurity region including a first impurity of a first concentration, and a depletion buffer region on at least a part of side walls of the element isolation film, the depletion buffer region including a second impurity of a second concentration higher than the first concentration, a conductivity type of the second impurity being the same as a conductivity type of the first impurity.

公开(公告)号：US11990526B2

公开(公告)日：2024-05-21

申请号：US17735155

申请日：2022-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Mok Kim ,  Yong Sang Jeong ,  Kyung Lyong Kang ,  Jun Gu Kang

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/423

CPC classification number: H01L29/4236 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device includes; an active region extending in a first horizontal direction on a substrate, source/drain regions disposed on the active region, a buried trench formed between the source/drain regions, a buried insulating layer surrounding both side walls of the buried trench in the first horizontal direction between the source/drain regions, a wing trench formed in a lower part of the buried trench and having a width greater than a width of the buried trench, and a gate electrode extending in a second horizontal direction on the active region, and disposed within each of the buried trench and the wing trench.