公开(公告)号：US20200258753A1

公开(公告)日：2020-08-13

申请号：US16596945

申请日：2019-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Soo LEE ,  Yoshihisa Hirano ,  Jae Hoon Kim ,  Young Jin Noh ,  Sung Moon Park ,  Seung Kyu Lim ,  Kyeong Seok Jeong ,  Hyung Kyu Choi

IPC: H01L21/3065 ,  H01J37/32

Abstract: A plasma processing apparatus may include a lower electrode supporting a wafer; a focus ring surrounding an edge of the lower electrode and having a ring shape; and an edge ring disposed in a position lower than a position of the focus ring. The focus ring may include a lower region and an upper region disposed on the lower region, and the upper region increases in electrical conductivity as the upper region is closer to the lower region.