Variable resistance memory device

    公开(公告)号:US11706931B2

    公开(公告)日:2023-07-18

    申请号:US17230029

    申请日:2021-04-14

    IPC分类号: H10B61/00 H10B63/00

    摘要: A variable resistance memory device including a substrate; horizontal structures spaced apart from each other in a first direction perpendicular to a top surface of the substrate; variable resistance patterns on the horizontal structures, respectively; and conductive lines on the variable resistance patterns, respectively, wherein each of the horizontal structures includes a first electrode pattern, a semiconductor pattern, and a second electrode pattern arranged along a second direction parallel to the top surface of the substrate, and each of the variable resistance patterns is between one of the second electrode patterns and a corresponding one of the conductive lines.