SEMICONDUCTOR DEVICE
    1.
    发明申请

    公开(公告)号:US20220005808A1

    公开(公告)日:2022-01-06

    申请号:US17476663

    申请日:2021-09-16

    Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including a substrate; a lower structure including pad patterns on the substrate, upper surfaces of the pad patterns being at an outer side of the lower structure; a plurality of lower electrodes contacting the upper surfaces of the pad patterns; a dielectric layer and an upper electrode sequentially stacked on a surface of each of the lower electrodes; and a hydrogen supply layer including hydrogen, the hydrogen supply layer being between the lower electrodes and closer to the substrate than the dielectric layer is to the substrate.

    SEMICONDUCTOR DEVICE
    2.
    发明申请

    公开(公告)号:US20200152634A1

    公开(公告)日:2020-05-14

    申请号:US16420387

    申请日:2019-05-23

    Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including a substrate; a lower structure including pad patterns on the substrate, upper surfaces of the pad patterns being at an outer side of the lower structure; a plurality of lower electrodes contacting the upper surfaces of the pad patterns; a dielectric layer and an upper electrode sequentially stacked on a surface of each of the lower electrodes; and a hydrogen supply layer including hydrogen, the hydrogen supply layer being between the lower electrodes and closer to the substrate than the dielectric layer is to the substrate.

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