公开(公告)号：US20250031442A1

公开(公告)日：2025-01-23

申请号：US18423117

申请日：2024-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Won Park ,  Min Seok Jo ,  Woo Sung Park ,  Jun-Youp Lee ,  Jin Young Choi

IPC: H01L27/092 ,  H01L23/528 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775

Abstract: A semiconductor device includes a first substrate having a first surface and a second opposite surface, a first lower interlayer insulating layer on the second surface, a first active pattern including a first lower pattern contacting the first surface, a plurality of first sheet patterns spaced apart from the first lower pattern in a second direction, a first gate structure on the first lower pattern, a first source/drain pattern on a side of the first gate structure, a second lower interlayer insulating layer including a third surface and a fourth opposite surface, a second active pattern including a second lower pattern contacting the third surface, a plurality of second sheet patterns spaced apart from the second lower pattern in the second direction, a second gate structure on the second lower pattern, wherein the first lower pattern has a first height, and the second lower pattern has a second different height.