公开(公告)号：US20150171215A1

公开(公告)日：2015-06-18

申请号：US14444155

申请日：2014-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-uk HAN ,  Won-kyung PARK ,  Jun-ho PARK ,  Jun-hee LIM ,  Ki-jae HUR

IPC: H01L29/78 ,  G11C7/06 ,  H01L27/088

CPC classification number: H01L29/7835 ,  G11C5/025 ,  G11C7/065 ,  G11C11/4091 ,  G11C16/26 ,  H01L21/823437 ,  H01L27/0207 ,  H01L27/088

Abstract: A semiconductor device includes an active region defined on a substrate, a gate electrode disposed on the active region and covering two adjacent corners of the active region, a drain area formed in the active region adjacent to a first side of the gate electrode, and a source area formed in the active region adjacent to a second side of the gate electrode. The first and second sides of the gate electrode are spaced apart from each other, and the first side has a bent shape.

Abstract translation: 半导体器件包括限定在衬底上的有源区，设置在有源区上并覆盖有源区的两个相邻角的栅电极，形成在与栅电极的第一侧相邻的有源区中的漏区，以及 源极区域形成在与栅电极的第二侧相邻的有源区域中。 栅电极的第一和第二侧彼此间隔开，第一侧具有弯曲形状。