公开(公告)号：US20250104784A1

公开(公告)日：2025-03-27

申请号：US18762272

申请日：2024-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JunHo KIM ,  Sangjin Yoo ,  Kwangwoo Lee ,  Jeongwoo Lee ,  Heewon Lee

IPC: G11C16/34 ,  G11C16/26 ,  G11C29/52

Abstract: A data recover read (DRR) operation method of a nonvolatile memory system includes: performing a first read operation on adjacent memory cells, which are connected to an adjacent wordline adjacent to a target wordline, based on a first specific read level; obtaining a cell count value for the adjacent wordline; determining offset values for a normal read level of target memory cells, which are connected to the target wordline, based on the cell count value for the adjacent wordline; and performing a second read operation on the target memory cells, based on the determined offset values and a result of the first read operation.