公开(公告)号：US20240347563A1

公开(公告)日：2024-10-17

申请号：US18386871

申请日：2023-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junoh KIM ,  Munhwan KIM ,  Hyeonseop Yoo

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14603

Abstract: An image sensor includes a substrate, a polysilicon-vertical gate, a photoelectric conversion element, a channel, and a floating diffusion region. The substrate has a front surface and a back surface that opposes the front surface. The polysilicon-vertical gate is disposed in an upper region adjacent to the front surface of the substrate and extends into the substrate. The photoelectric conversion element is disposed at a lower position within the substrate with respect to the polysilicon-vertical gate. The channel is disposed adjacent to the polysilicon-vertical gate and doped with dopants of a same conductivity type as the photoelectric conversion element. The floating diffusion region is disposed in the upper region of the substrate and adjacent to the polysilicon-vertical gate in a first parallel direction that is parallel to the front surface of the substrate. The polysilicon-vertical gate, the photoelectric conversion element, and the floating diffusion region constitute a junctionless transfer transistor.

公开(公告)号：US20250040272A1

公开(公告)日：2025-01-30

申请号：US18756899

申请日：2024-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junoh KIM ,  Munhwan Kim ,  Jieun Lee

IPC: H01L27/146

Abstract: There is provided an image sensor including a substrate, a plurality of pixel groups respectively including a plurality of photodiodes provided in the substrate, a pixel isolation pattern provided between the plurality of photodiodes in the substrate, an auxiliary isolation pattern provided to extend inside from a surface of the substrate, and a micro lens provided on the surface of the substrate. The pixel isolation pattern includes an outer isolation pattern provided between the plurality of pixel groups and an inner isolation pattern provided between the plurality of photodiodes within the plurality of pixel group, and the auxiliary isolation pattern is provided between the outer isolation pattern and the inner isolation pattern that are spaced apart from each other or between a plurality of inner isolation patterns that are spaced apart from each other.