公开(公告)号：US20250029941A1

公开(公告)日：2025-01-23

申请号：US18439381

申请日：2024-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUNSU HWANG ,  UN-BYOUNG KANG ,  KUYOUNG KIM ,  JUMYONG PARK ,  DONGJOON OH ,  SANGHOO CHO

IPC: H01L23/00

Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a substrate, a seed layer on the substrate, and a wiring pad on the seed layer. The wiring pad includes a pad portion, and a capping layer on the seed layer and covering a top surface and a lateral surface of the pad portion. A bottom surface of the pad portion is in contact with a top surface of the seed layer. A width of the top surface of the pad portion is greater than a width of the bottom surface of the pad portion.

公开(公告)号：US20250029955A1

公开(公告)日：2025-01-23

申请号：US18616418

申请日：2024-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon JUNG ,  UN-BYOUNG KANG ,  YEONGKWON KO ,  KUYOUNG KIM

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/48 ,  H10B80/00

Abstract: A semiconductor package includes: a buffer die; a plurality of memory dies stacked on the buffer die; a mold layer covering a portion of a top surface of the buffer die and lateral surfaces of the plurality of memory dies; and an inorganic layer disposed on the mold layer, wherein the inorganic layer covers at least a portion of the lateral surface of an uppermost memory die of the plurality of memory dies, wherein a top surface of the inorganic layer is substantially coplanar with a top surface of the uppermost memory die of the plurality of memory dies, and wherein the inorganic layer includes oxide or nitride.