公开(公告)号：US20250029941A1

公开(公告)日：2025-01-23

申请号：US18439381

申请日：2024-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUNSU HWANG ,  UN-BYOUNG KANG ,  KUYOUNG KIM ,  JUMYONG PARK ,  DONGJOON OH ,  SANGHOO CHO

IPC: H01L23/00

Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a substrate, a seed layer on the substrate, and a wiring pad on the seed layer. The wiring pad includes a pad portion, and a capping layer on the seed layer and covering a top surface and a lateral surface of the pad portion. A bottom surface of the pad portion is in contact with a top surface of the seed layer. A width of the top surface of the pad portion is greater than a width of the bottom surface of the pad portion.

公开(公告)号：US20250125290A1

公开(公告)日：2025-04-17

申请号：US18647497

申请日：2024-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUNSU HWANG ,  JUMYONG PARK ,  DONGJOON OH ,  SANGHOO CHO ,  JEONGGI JIN

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532

Abstract: A semiconductor device includes a structure including a dielectric layer and a wire pattern embedded in the dielectric layer. The dielectric layer includes first regions and a second region around the first regions. The second region has an upper surface positioned at a lower level than upper surfaces of the first regions. A barrier layer is on the structure. The barrier layer is disposed on each first region among the first regions and is connected to the wire pattern. A seed metal layer is on the barrier layer. A conductive pad is on the seed metal layer.