公开(公告)号：US20250159986A1

公开(公告)日：2025-05-15

申请号：US18639141

申请日：2024-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kang-min JUNG ,  Kang-ill SEO

IPC: H01L27/12 ,  H01L21/84 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Provided is a semiconductor device which includes: a 1st active region extended in a 1st direction and including: a 1st out-corner edge at which a width of the 1st active region in a 2nd direction gradually changes along the 1st direction; and a 1st in-corner edge at which the width of the 1st active region less gradually changes along the 1st direction than at the 1st out-corner edge; and a gate structure extended in the 2nd direction and overlapping the 1st out-corner edge in a 3rd direction, wherein the 1st direction horizontally intersects the 2nd direction, and the 3rd direction vertically intersects the 1st direction and the 2nd direction.