公开(公告)号：US11855115B2

公开(公告)日：2023-12-26

申请号：US17315589

申请日：2021-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KangMook Lim ,  Dae Hoon Kim ,  Seung Sik Kim ,  Ji-Youn Song ,  Jae Hoon Jeon ,  Dong Seok Cho

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

公开(公告)号：US20220077216A1

公开(公告)日：2022-03-10

申请号：US17315589

申请日：2021-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KangMook Lim ,  Dae Hoon Kim ,  Seung Sik Kim ,  Ji-Youn Song ,  Jae Hoon Jeon ,  Dong Seok Cho

IPC: H01L27/146

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.