公开(公告)号：US11476287B2

公开(公告)日：2022-10-18

申请号：US16928263

申请日：2020-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gwi Deok Ryan Lee ,  Jae Kyu Lee ,  Sang Chun Park ,  Tae Yon Lee ,  Jae Hoon Jeon ,  Myung Lae Chu

IPC: H01L27/146 ,  H01L21/00 ,  H01L27/30 ,  H01L29/786 ,  H04N5/369

Abstract: An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor having a transistor structure disposed between the first surface and the photoelectric conversion layer and spaced from the photoelectric conversion layer, and includes a semiconductor layer composed of a metal oxide semiconductor material. The semiconductor layer may have a third surface facing the first direction and a fourth surface opposite the third surface, with a second gate disposed on the semiconductor layer. The semiconductor layer may be connected to the first gate. A light blocking layer may be disposed between the third surface and the photoelectric conversion layer, and spaced from the photoelectric conversion layer.

公开(公告)号：US11855115B2

公开(公告)日：2023-12-26

申请号：US17315589

申请日：2021-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KangMook Lim ,  Dae Hoon Kim ,  Seung Sik Kim ,  Ji-Youn Song ,  Jae Hoon Jeon ,  Dong Seok Cho

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

公开(公告)号：US20220077216A1

公开(公告)日：2022-03-10

申请号：US17315589

申请日：2021-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KangMook Lim ,  Dae Hoon Kim ,  Seung Sik Kim ,  Ji-Youn Song ,  Jae Hoon Jeon ,  Dong Seok Cho

IPC: H01L27/146

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

公开(公告)号：US20230057857A1

公开(公告)日：2023-02-23

申请号：US17872056

申请日：2022-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kang Mook Lim ,  Seung Sik Kim ,  Jae Hoon Jeon ,  Je Yeoun Jung

IPC: H01L27/146

Abstract: An image sensor includes: a substrate including a first area and a second area; a plurality of unit pixels disposed in the substrate, wherein each of the plurality of unit pixels includes a photoelectric conversion layer; a pixel defining pattern separating the unit pixels from each other; a surface insulating film disposed on the substrate; a line structure disposed on the substrate, and including a first interline insulating film and a wire pattern disposed in the first interline insulating film; a micro-lens disposed in the first area; and a light-blocking film disposed in the second area. The light-blocking film includes: a horizontal light-blocking film extending along a top surface of the surface insulating film; and a vertical light-blocking film extending through the surface insulating film and the substrate. The vertical light-blocking film is electrically connected to the wire pattern. The light-blocking film is electrically connected to the pixel defining pattern.