公开(公告)号：US20190067058A1

公开(公告)日：2019-02-28

申请号：US15941170

申请日：2018-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Katsuhiro SHIMAZU ,  In-Sung HWANG

IPC: H01L21/67 ,  G06F7/58

Abstract: A method for predicting characteristics of semiconductor devices includes collecting first data for a plurality of first characteristics from first semiconductor devices already in mass production, and collecting second data for the first characteristics and third data for a plurality of second characteristics from at least one second semiconductor device manufactured as an experimental sample before beginning the mass production. A covariance matrix is then obtained based on the first, second, and third data, and a mean vector for third semiconductor devices to be in the mass production is determined. Prediction data for third semiconductor devices is then generated based on the covariance matrix and the mean vector.