公开(公告)号：US20250054866A1

公开(公告)日：2025-02-13

申请号：US18796804

申请日：2024-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun Wook SHIN ,  Sangwon KIM ,  Chang Seok LEE ,  Joonseok KIM ,  Joonyun KIM ,  Giyoung JO ,  Luhing HU

IPC: H01L23/532 ,  H01L23/528

Abstract: Disclosed are an interconnect structure including a substrate, a metal layer on the substrate, and a passivation layer including a topological compound and in contact with the metal layer.

公开(公告)号：US20250167043A1

公开(公告)日：2025-05-22

申请号：US18948843

申请日：2024-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keun Wook SHIN ,  Sangwon KIM ,  Joonseok KIM ,  Joonyun KIM ,  Daejin YANG ,  Chang Seok LEE ,  Tae Won JEONG ,  GIYOUNG JO ,  LUHING HU

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: An interconnect structure including a dielectric layer having a trench structure; a conductive wiring including a metal compound represented by Chemical Formula 1 disposed within the trench structure (conductive interconnect), and air gap disposed between the conductive wiring. The trench structure has a line width of less than or equal to about 10 nm and an aspect ratio of greater than or equal to about 3. MXa  Chemical Formula 1 In Chemical Formula 1, M is at least one metal of Zr, Nb, Cu, Ru, Al, Co, W, Mo, Ti, Ta, Ni, Pt, Cr, Rh, Ir, Pd, or Os, X is at least one element of C, N, P, As, S, Se, or Te, and a is a number determined by the stoichiometry of M and X.