公开(公告)号：US20230012525A1

公开(公告)日：2023-01-19

申请号：US17692953

申请日：2022-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-Heung KIM ,  Jun Hyung KIM ,  Chang-Yong LEE ,  Sang Uhn CHA ,  Kyung-Soo HA

IPC: G06F11/10 ,  G06F11/07 ,  G06F3/06

Abstract: A method of operating a memory device is provided. The method includes: receiving a first command from a controller; activating a page of a memory cell array based on the first command; reading data of the activated page; detecting an error from the read data; correcting the detected error to generate error correction data; writing back the error correction data to the activated page in based on the detected error being a single-bit error; and blocking write-back of the error correction data to the activated page based on the detected error being a multi-bit error.

公开(公告)号：US20240289058A1

公开(公告)日：2024-08-29

申请号：US18590324

申请日：2024-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-Heung KIM ,  Taeyoung Oh ,  Taekwoon Kim ,  Jinseong Yun ,  Yoonjae Jeong ,  Hyongryol Hwang

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0683

Abstract: A method of operating a memory module that communicates with a memory controller includes: entering a one-time programmable (OTP) addressing mode based on an OTP command received from the memory controller; determining whether a guard key sequence is satisfied based on a plurality of mode register commands received from the memory controller; and programming, based on a determination that the guard key sequence is satisfied, a unique identifier (ID), corresponding to a target memory device, into the target memory device, among a plurality of memory devices included in the memory module.